Advanced Semiconductor Devices|教育線上App不用買

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This ultimate application is for all engineering students across the world. It covers 169 topics of Advance Semiconductor Devices in detail. These 169 topics are divided in 5 units.

Each topic is around 600 words and is complete with diagrams, equations and other forms of graphical representations along with simple text explaining the concept in detail.

This USP of this application is "ultra-portability". Students can access the content on-the-go from anywhere they like.

Basically, each topic is like a detailed flash card and will make the lives of students simpler and easier.

Some of topics Covered in this application are:

1. The Haynes-Shockley Experiment

2. Semiconductor Materials

3. Crystal Lattice

4. Cubic Lattices

5. Planes and Directions

6. The Diamond Lattice

7. Bulk Crystal Growth

8. Growth of Single Crystal Ingots

9. Wafers

10. Epitaxial growth

11. Vapor-phase epitaxy

12. Molecular beam epitaxy

13. Charge Carriers in Semiconductors

14. Effective Mass

15. Intrinsic Material

16. Extrinsic Material

17. Electrons and Holes in Quantum Wells

18. The Fermi Level

19. Compensation and Space Charge Neutrality

20. Drift and Resistance

21. Optical absorption

22. Photoluminescence

23. Electroluminescence

24. Carrier Lifetime and Photoconductivity

25. Direct Recombination of Electrons and Holes

26. Indirect Recombination; Trapping

27. Steady State Carrier Generation; Quasi-Fermi Levels

28. Photoconductive Devices

29. Diffusion Processes

30. Diffusion and Drift of Carriers: Built-in Fields

31. Diffusion and Recombination; The Continuity Equation

32. Steady State Carrier Injection: Diffusion Length

33. Gradients in the Quasi-Fermi Levels

34. Temperature Dependence of Carrier Concentrations

35. Effects of Temperature and Doping on Mobility

36. High-Field Effects

37. The Hall Effect

38. Fabrication of p-n Junctions: Thermal oxidation

39. Diffusion of P-N junction

40. Rapid Thermal Processing

41. Ion Implantation

42. Chemical Vapor Deposition (CVD)

43. Photolithography

44. Etching

45. Metallization

46. Equilibrium Conditions

47. Equilibrium Fermi Levels

48. Space Charge at a Junction

49. Forward- and Reverse-Biased Junctions

50. Carrier Injection

51. Reverse Bias

52. Reverse-Bias Breakdown

53. Zener Breakdown

54. Avalanche Breakdown

55. Rectifiers

56. The Breakdown Diode

57. Transient and A-C Conditions

58. Reverse Recovery Transient

59. The Ideal Diode Model

60. Effects of Contact Potential on Carrier Injection

61. Switching Diodes

62. Capacitance of p-n junctions

63. Recombination and Generation in the Transition Region

64. Ohmic Losses

65. Graded Junctions

66. Metal semiconductor junctions: schottky barriers

67. Current Transport Processes

68. Thermionic-Emission Theory

69. Diffusion Theory

70. Thermionic-Emission-Diffusion Theory

71. Rectifying Contacts

72. Tunneling Current

73. Minority-Carrier Injection

74. MIS Tunnel Diode

75. Measurement of Barrier Height

76. Activation-Energy Measurement

77. Photoelectric Measurement

78. Ohmic Contacts

79. Typical Schottky Barriers

80. Heterojunctions

81. Tunnel Diodes

82. Construction of Tunnel Diodes

83. The Backward Diode

84. MIM tunnel diode

85. Structure of resonant-tunneling diode

86. I-V characteristics of resonant-tunneling diode

87. Photodiodes

88. The Varactor Diode

89. Current and Voltage in an Illuminated Junction

90. Solar Cell- Working Principle

91. Solar Cell- I-V Characterstics

92. Photodetectors

93. Gain, Bandwidth, and Signal-to-Noise Ratio of photodetector

94. Light Emitting Diodes

95. Light Emitting Materials

96. Fiber-Optic Communications

97. Semiconductor lasers

98. Population Inversion at a Junction

99. Emission Spectra for p-n Junction Lasers

All topics are not listed because of character limitations set by the Play Store.

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